10x10 mm AlGaN/GaN high electron mobility transistors (HEMTs) grown on silicon substrate
HEMT structure for 650 V power electronics applications
Special layer structures can be custom made upon request. Please contact us for a quote. D-mode HEMT, E-mode HEMT, RF HEMT wafers are available upon request.
- Product SKU#: WA0249
- Thickness of GaN cap layer: 3 nm
- AlGaN composition: 26% Al, 74% GaN
- AlGaN barrier layer thickness: 25 nm
- AlN inter-layer thickness: 1 nm
- Thickness of GaN layer: 2 um
- Thickness of buffer layer: ~ 1 um
- Thickness of Si (111) substrate: 1000 um
- Sheet resistance (Ohms per square):
- Electron mobility: > 1300 cm2/V-sec for Si substrate
- Sheet carrier concentration (/cm): ~ 1E13
- Breakdown voltage: > 1000 V
- Bow:
- RMS roughness (AFM):
- 2 um GaN layer Resistivity: > 1E5 Ohm.cm
